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| (R) VN21SP HIGH SIDE SMART POWER SOLID STATE RELAY T YPE VN21SP s V DSS 60 V R DS(on) 0.05 I n( *) 7A V CC 26 V s s s s s s MAXIMUM CONTINUOUS OUTPUT CURRENT (#):23 A @ Tc=85oC 5 V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION 10 1 PowerSO-10TM DESCRIPTION The VN21SP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state, and in on state, output shorted to BLOCK DIAGRAM VCC and overtemperature. Fast demagnetization of inductive loads is archivied by negative (-18V) load voltage at turn-off. (*) In = Nominal current according to ISO definition for high side automotive switch (see note 1) (#) The maximum continuous output current is the the current at Tc = 85 oC for a battery voltage of 13V which does not activate self protection. July 1998 1/9 VN21SP ABSOLUTE MAXIMUM RATING Symb ol V (BR)DSS I OUT IR I IN -V CC I STAT V ESD P tot Tj T s tg Parameter Drain-Source Breakdown Voltage Output Current (cont.) at T c = 85 o C Reverse Output Current at T c = 85 C Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k, 100 pF) Power Dissipation at T c = 85 C Junction Operating Temperature Storage Temperature o o Value 60 23 -23 10 -4 10 2000 48 -40 to 150 -55 to 150 Unit V A A mA V mA V W o o C C CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/9 VN21SP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) Max Max 1.35 50 o o C/W C/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 Tj 125 oC unless otherwise specified) POWER Symb ol VCC In(*) R on IS V DS(MAX) Parameter Supply Voltage Nominal Current On State Resistance Supply Current T c = 85 C I OUT = 7 A I OUT = 7 A Off St ate On State o Test Cond ition s V DS(on) 0.5 (note 1) Tj = 25 o C Tj 25 C T c = 85 oC o Min. 5.5 7 Typ . 13 Max. 26 Un it V A A mA V 0.10 0.05 50 15 1.8 Maximum Voltage Drop I OUT = 20 A SWITCHING Symb ol t d(on)(^) t r (^) t d(off )(^) tf (^) (di/dt) on (di/dt) off V demag Parameter Turn-on Delay Time Of Output Current Rise Time O f O utput Current Test Cond ition s I OUT = 7 A Resistive Load Input Rise T ime < 0.1 s I OUT = 7 A Resistive Load Input Rise T ime < 0.1 s Min. Typ . 60 70 90 25 0.08 0.2 L = 1 mH -24 -18 0.5 1 3 3 -14 140 Max. Un it s s s s A/s A/s A/s A/s V Turn-off Delay Time O f I OUT = 7 A Resistive Load Output Current Input Rise T ime < 0.1 s Fall T ime Of Output Current Turn-on Current Slope Turn-off Current Slope Inductive Load Clamp Voltage I OUT = 7 A Resistive Load Input Rise T ime < 0.1 s I OUT = 7 A I OUT = I OV I OUT = 7 A I OUT = I OV I OUT = 7 A LOGIC INPUT Symb ol VI L VI H V I(hyst.) I IN Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current VI N = 5 V VI N = 2 V V I N = 0.8 V I IN = 10 mA I IN = -10 mA 2 0.5 250 25 5.5 6 -0.7 -0.3 500 250 Test Cond ition s Min. Typ . Max. 0.8 (*) Un it V V V A A A V V V ICL Input Clamp Voltage 3/9 VN21SP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symb ol V STAT V USD V SCL I OV I AV I OL T TSD TR V OL t 1(on) t 1(of f) t 2(of f) t povl t po l Parameter Status Voltage Output Low Under Voltage Shut Down Status Clamp Voltage Over Current Average Current in Short Circuit Open Load Current Level Thermal Shut-down Temperature Reset Temperature Open Load Voltage Level Open Load Filtering Time Open Load Filtering Time Open Load Filtering Time Status Delay Status Delay Off-State (note 2) (note 3) (note 3) (note 3) (note 3) (note 3) 50 I STAT = 10 mA I STAT = -10 mA R LOAD < 10 m R LOAD < 10 m -40 T c 125 o C Tc = 85 C 5 140 125 2.5 1 1 1 3.75 5 5 5 5 700 5 10 10 10 10 o Test Cond ition s I STAT = 1.6 mA Min. Typ . Max. 0.4 Un it V V V V 5 6 -0.7 140 2.5 300 700 A A mA o C C o V ms ms ms s s (^) See Switchig Time Waveforms () The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. note 1:The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V note 2:IOL (off) = (VCC -VOL)/ROL (see figure) note 3:t1(on): minimum open load duration which acctivates the status output t1(off): minimum load recovery time which desactivates the status output t2(off): minimum on time after thermal shut down which desactivates status output tpo vl tpol: ISO definition (see figure) Note 2 Relevant Figure Note 3 Relevant Figure 4/9 VN21SP Switching Time Waveforms typical voltage (Vdemag) of -18V. This function allows to greatly reduce the power dissipation according to the formula: Pdem = 0.5 * Lload * (Iload)2* [(VCC+Vdemag)/Vdemag] *f where f = switching frequency and Vdemag = demagnetization voltage Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. The maximum inductance which causes the chip temperature to reach the shut down temperature in a specific thermal environment, is infact a function of the load current for a fixed VCC, Vdemag and f. PROTECTING THE DEVICE AGAIST LOAD DUMP - TEST PULSE 5 The device is able to withstand the test pulse No. 5 at level II (Vs = 46.5V) according to the ISO T/R 7637/1 without any external component. This means that all functions of the device are performed as designed after exposure to disturbance at level II. The VN06SP is able to withstand the test pulse No.5 at level III adding an external resistor of 150 ohm between GND pin and ground plus a filter capacitor of 1000 F between VCC pin and ground (if RLOAD 20 ). PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between GND pin and ground, as shown in the typical application circuit (fig.3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shutdown level is increa- sed by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [6] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode. 5/9 FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open load conditions in off state as well as in on state, output shorted to VCC and overtemperature. The truth table shows input, diagnostic and output voltage level in normal operation and in fault conditions. The output signals are processed by internal logic. The open load diagnostic output has a 5 ms filtering. The filter gives a continuous signal for the fault condition after an initial delay of about 5 ms. This means that a disconnection during normal operation, with a duration of less than 5 ms does not affect the status output. Equally, any re-connection of less than 5 ms during a disconnection duration does not affect the status output. No delay occur for the status to go low in case of overtemperature conditions. From the falling edge of the input signal the status output initially low in fault condition (over temperature or open load) will go back with a delay (tpovl)in case of overtemperature condition and a delay (tpol) in case of open load. These feature fully comply with International Standard Office (I.S.O.) requirement for automotive High Side Driver. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. Driving inductive loads, an internal function of the device ensures the fast demagnetizationwith a VN21SP TRUTH TABLE INPUT Normal Operation O pen Circuit (No Load) O ver-temperature Under-voltage Short load to V CC L H H H X L O UTPUT L H H L L H DIAGNOST IC H H L L H L Figure 1: Waveforms Figure 2: Over Current Test Circuit 6/9 VN21SP Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 7/9 VN21SP PowerSO-10 MECHANICAL DATA DIM. MIN. A A1 B c D D1 E E1 E2 E3 E4 e F H h L q 0 o mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 1.27 1.25 13.80 0.50 1.20 1.70 8o 1.80 0.047 1.35 14.40 0.049 0.543 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.366 0.283 0.283 0.240 0.232 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 6.10 5.90 inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 0.300 0.250 0.240 0.050 0.053 0.567 0.002 0.071 0.067 B 0.10 A B 10 = H = A F A1 = 6 = = = E = 1 5 e 0.25 M = E2 E3 E1 E4 = = A = SEATING PLANE DETAIL "A" Q B C h D = D1 = = = SEATING PLANE = A1 L DETAIL "A" 0068039-C 8/9 VN21SP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 9/9 |
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